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Unilateral transducer power gain

A unilateral device is one whose scattering parameter tex2html_wrap_inline2965. This implies that the transistor network has no internal feedback. This requirement is very difficult to achieve at microwave frequency. Theoretically, an external circuit can be used to add feedback such that the effect of internal feedback can be eliminated. This method is called neutralization. However, the result of this technique is satisfactory only when the amplifier is operating at VHF frequency with a narrow bandwidth.

The unilateral transducer power gain is
eqnarray592
tex2html_wrap_inline2967 is a parameter of transistors usually given in the manufacturer's data sheet. tex2html_wrap_inline2969, tex2html_wrap_inline2971 are related to the degree of matching between the transistor and the terminations. Maximum unilateral transducer power gain tex2html_wrap_inline2973 can be achieved if input and output matching networks can provide maximum power transfer between the transistor and terminations, i.e. they are conjugately matched, tex2html_wrap_inline2975 and tex2html_wrap_inline2977.
equation614

Example In a 50 tex2html_wrap_inline2807 system, a transistor has the following S-parameter at 1.3 GHz.
displaymath2947

displaymath2948
Find

  1. the maximum power gain,
  2. the optimum terminations.

Solution


  1. displaymath2949

    displaymath2950

    displaymath2951
    The maximum power gain is
    displaymath2952
  2. The optimum terminations are
    displaymath2953

    displaymath2954
    From a normalized impedance chart, a reflection coefficient of tex2html_wrap_inline2981 corresponds to a normalized impedance of z=0.26 +j1.8. Hence
    displaymath2955


Chow~{BmLo~}
Wed Apr 8 10:05:00 HKT 1998